Thank you for your interest in our available NSN parts 10419937 and components on Purchasing Union. 10419937 is described as a Microcircuit Memory part, and it is manufactured by Paeaeesikunta. This component is readily available for purchase today, and our team of industry experts are on standby 24/7x365 to provide you with rapid-lead times and competitive pricing on all that we carry. To begin the purchasing process, you may submit an Instant RFQ form as provided through our website. Once it is received, a member of our staff will reach out to you in 15 minutes or less to provide a personalized quote that is crafted to fit your individual needs.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-359-3251 Item Description: Microcircuit Memory | 5962 | 013593251 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
10419937 | 5 | 9 | 6 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYAND-OR INVERT GATE ARRAYF-15 INTERFACE PAL READ ADDRESS DECODER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 12 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
MEMORY | CZER | MEMORY DEVICE TYPEPAL |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING2 0 WATTS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATION6605-01-296-9809 INERTIAL SYSTEM NAVIGATION |
MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED AND WCLOCK AND HIGH IMPEDANCE AND WDISABLE AND BIDIRECTIONAL |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC180 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
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