Thank you for your interest in our available NSN parts MT1259-12-883 and components on Purchasing Union. MT1259-12-883 is described as a Microcircuit Memory part, and it is manufactured by Micron Electronics Inc. This component is readily available for purchase today, and our team of industry experts are on standby 24/7x365 to provide you with rapid-lead times and competitive pricing on all that we carry. To begin the purchasing process, you may submit an Instant RFQ form as provided through our website. Once it is received, a member of our staff will reach out to you in 15 minutes or less to provide a personalized quote that is crafted to fit your individual needs.
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Purchasing Union is a state of the art purchasing platform, and we are a leading independent distributor of MT1259-12-883 that cater to a diverse set of industries and applications. To ensure the quality of our inventory for our customers, we choose to only source our parts from top global manufacturers that we trust, such as Micron Electronics Inc. We also ensure that every part is rigorously tested, inspected, and cross-referenced before being shipped. Peruse our inventory at your leisure to find a multitude of top requested parts like 5962012715534, and our team is ready to serve as your strategic sourcing partner today. (CAGE Code 65389).
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-271-5534 Item Description: MICROCIRCUIT,MEMORY | 5962 | 012715534 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
MT1259-12/883 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 250 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 130 INCHES NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND LOW POWER AND MONOLITHIC |
MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CRHL | BIT QUANTITY262144 |
MEMORY | CSWJ | WORD QUANTITY262144 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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