Thank you for your interest in our available NSN parts 1914933P8 and components on Purchasing Union. 1914933P8 is described as a Microcircuit Memory part, and it is manufactured by Bae Systems Information And. This component is readily available for purchase today, and our team of industry experts are on standby 24/7x365 to provide you with rapid-lead times and competitive pricing on all that we carry. To begin the purchasing process, you may submit an Instant RFQ form as provided through our website. Once it is received, a member of our staff will reach out to you in 15 minutes or less to provide a personalized quote that is crafted to fit your individual needs.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-228-9818 Item Description: Microcircuit Memory | 5962 | 012289818 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1914933p8 | 2 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 230 INCHES MINIMUM AND 1 285 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 545 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 135 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND HIGH PERFORMANCE AND ASYNCHRONOUS AND SCHOTTKY |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY8192 |
MEMORY | CSWJ | WORD QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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